BT150-500R
Description
Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
Key Features
- 60 MAX UNIT 2.5 K/W
- K/W http://.haopin. 1/5 TM HPM HAOPIN MICROELECTRONICS CO.,LTD. BT150 SCRs Limiting values in accordance with the Maximum system(IEC
- SYMBOL PARAMETER CONDITIONS MIN VDRM VRRM Repetitive peak off-state Voltages 500R 600R
- 800R I TAV Average on-state current Half sine wave;Tmb<=113
- IT(RMS) RMS on-state current All conduction angles ITSM Non-repetitive peak half sine wave; Tj = 25oC T=10ms
- On-state current prior to surge T=8.3ms
- I2t I2t for fusing T=10ms
- DIT/dt Repetitive rate of vise of on-state current after trigering I = TM 10A; IG=50mA; D /IG dt=50mA/ s
- IGM Peak gate current
- VGM Peak gate voltage
