BTB06-600BW
Description
Passivated high mutation triacs in a plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will mutate the full rated ms current at the maximum rated junction temperature without the aid of a snubber.
Key Features
- 1.8 MAX UNIT
- SYMBOL PARAMETER VDRM IT(RMS) Repetitive peak off-state Voltages RMS on-state current CONDITIONS Full sine wave;Tc<=110 MIN
- ITSM Non repetitive surge peak on-statecurrent full cycle, Tj initial= 25 F=50HZ t=20ms
- F=60HZ t=16.7ms
- I2t I2t Value for fusing Tp=10ms
- Value 600 6 UNIT V A 60 A 63 A 21 A2S DI/dt Critical rate of rise of on-state current IG=2x I , GT tr<=100ns F=120HZ Tj=125
- 40 125 TJ=25OC unless otherwise stated SYMBOL PARAMETER CONDITIONS Static characteristics IGT1 VD=12V; RL=30 VGT MIN TYP MAX UNIT I-II-III
- 50 mA I-II-III 1.3 V IL Latching current IG=1.2 IGT I-III
- I-II-III 0.2
- VD=67%VDRM gate open;TJ=125 1000
