BTB12-600SW
Description
Passivated high mutation triacs in a plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will mutate the full rated ms current at the maximum rated junction temperature without the aid of a snubber.
Key Features
- 1.4 MAX UNIT
- ITSM Non repetitive surge peak on-state current full cycle, Tj initial= 25 F=50Hz t=20ms
- F=60Hz t=16.7ms
- I2t I2t Value for fusing tp=10ms
- Value V /V DRM RRM +100 12 120 126 78 UNIT V A A A A2S dI/dt Critical rate of rise of on-state current IG=2x I , GT tr<=100ns F=120Hz Tj=125
- 40 125 TJ=25OC unless otherwise stated SYMBOL PARAMETER CONDITIONS Static characteristics I ( GT
- VGT VD=12V; RL=30 MIN TYP MAX UNIT I-II-III
- 10 mA 1.3 V IL IH(2) VGD dV/dt(2) (dI/dt)c(2) IG=1.2 IGT I-III
- Rd(2) Threshold voltage Dynamic resistance Tj=125 Tj=125
- Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1
