HP4Q60DS
Description
Passivated high mutation triacs in a plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will mutate the full rated ms current at the maximum rated junction temperature without the aid of a snubber.
Key Features
- 2.6 MAX UNIT
- /W s=0.5 cm2
- SYMBOL PARAMETER VDRM Repetitive peak off-state Voltages CONDITIONS MIN
- MAX 600 UNIT V IT(RMS) I2t RMS on-state current Full sine wave I2t value for fusing Tc=110 Tp=10ms
- 5.1 A2s DI/dt Critical rate of rise of on-state current IG=2 IGT,tr 100 ns F=120HZ Tj=125
- 10 mA IL Latching current IG=1.2IGT I-III 25
- A/ms http://.haopin. 2/5 TM HAOPIN MICROELECTRONICS CO.,LTD. HP4Q60DS Three quadrant triacs
