HP6Q60RT
Description
Passivated high mutation triacs in a plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will mutate the full rated ms current at the maximum rated junction temperature without the aid of a snubber.
Key Features
- Blocking voltage to 600 V
- 2.7 MAX UNIT
- SYMBOL PARAMETER VDRM IT(RMS) Repetitive peak off-state Voltages RMS on-state current CONDITIONS Full sine wave;Tc<=105℃ MIN
- Non repetitive surge full cycle, ITSM peak on-statecurrent Tj initial= 25℃ F=50HZ t=20ms
- F=60HZ t=16.7ms
- I2t I2t Value for fusing Tp=10ms
- Value 600 6 UNIT V A 60 A 63 A 21 A2S DI/dt Critical rate of rise of on-state current IG=2x IGT,tr<=100ns F=120HZ Tj=125℃
- 5 mA I-II-III 1.3 V IL Latching current IH VGD dV/dt2 (Dv/dt)c(2) IG=1.2 IGT I-III
- 15 mA IT=100mA
- V VD=67%VDRM gate open;TJ=125℃ 20
