HP8Q80DS
Description
Passivated high mutation triacs in a plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will mutate the full rated ms current at the maximum rated junction temperature without the aid of a snubber.
Key Features
- 1.6 MAX UNIT
- SYMBOL PARAMETER V / DRM VRRM IT(RMS) Repetitive peak off-state Voltages RMS on-state current CONDITIONS Full sine wave;TC=110 MIN
- Non repetitive surge full cycle, ITSM peak on-state current Tj initial= 25 F=50Hz t=20ms
- F=60Hz t=16.7ms
- I2t I2t value for fusing tp=10ms
- Value 800 8 UNIT V A 80 A 84 A 36 A2S dI/dt IGM IDRM IRRM PG(AV) Tstg Tj Critical rate of rise of IG=2x IGT,tr<=100ns F=120Hz Tj=125
- 10 mA I-II-III 1.3 V IL IH(2) VGD dV/dt(2) (dl/dt)c(2) IG=1.2 IGT IT=100mA VD=VDRM RL=3.3K Tj=125 I-III
- 15 mA I-II-III 0.2
- V VD=67%VDRM gate open;Tj=125 40
- 0.85 V 50 m http://.haopin. 2/5 TM HAOPIN MICROELECTRONICS CO.,LTD
