S6006DS2 Overview
Description
Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
Key Features
- 70 MAX UNIT 2.0 K/W
- K/W 1/5 TM HPM HAOPIN MICROELECTRONICS CO.,LTD. S6006DS2 SCRs Limiting values in accordance with the Maximum system(IEC
- SYMBOL PARAMETER VRRM Repetitive peak reverse voltage CONDITIONS MIN
- IT(RMS) RMS on-state current
- Value 600 6 UNIT V A IGM I2t ITSM P G(AV) PGM Tq Ttg Peak gate current
- I2t for fusing RMS surge (non-repetitive)on-state
- current for period of 8.3ms for fusing Peak one-cycle forward surge current 60Hz
- Average gate power dissipation
- Peak gate power dissipation
- Circuit commutated tum-off time
