S6006DS2 Description
Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. Symbol Simplified outline a Pin 1 2 3 TAB k g TO-252 Description Cathode anode gate anode 123 SYMBOL PARAMETER VDRM Repetitive peak...
S6006DS2 Key Features
- In free air
- IT(RMS)
- I2t for fusing
- current for period of 8.3ms for fusing
- Average gate power dissipation
- Peak gate power dissipation
- Circuit mutated tum-off time
- Gate controlled tum-on time;gate pulse=100mA
- minmum width=15 s with rise time=<0.1 s
- Maximum rate-of-rise of on-state current