TYN612T Overview
Description
Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
Key Features
- 1.3 MAX UNIT
- /W 1/5 TM HPM HAOPIN MICROELECTRONICS CO.,LTD. TYN612T SCRs Limiting values in accordance with the Maximum system(IEC
- SYMBOL PARAMETER CONDITIONS MIN V /V DRM RRM
- IT(RMS) RMS on-state current 180oC conduction angle Tc=105
- ITSM Non repetitive surge peak on-statecurrent Tj=25oC tp=8.3ms
- Tj=25oC tp=10ms
- I T ( AV ) Average on-state current 180oC conduction angle Tc=105
- Value 600 12 - 146 140 - UNIT V A A A A I2t DI/dt IGM IDRM IRRM P G(AV) Tstg Tj I2t Value for fusing Tp=10ms Tj=25
- Critical rate of rise of on-state current IG=2x I , GT tr<=100ns F=60HZ Tj=125
- Peak gate current tp=20us Tj=125
