TYN612T Description
Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. Symbol Simplified outline a k g Pin 1 1 2 3 TO-220 Description Cathode 2 Anode 3 Gate Applications:.
TYN612T Key Features
- IT(RMS)
- Tj=25oC tp=10ms
- I T ( AV )
- 146 140
- Critical rate of rise of on-state current
- Peak gate current
- V =V DRM
- V =V DRM
- Average gate power dissipation
- Storage junction