Datasheet4U Logo Datasheet4U.com

F14N05 - Avalanche Rated N-Channel Enhancement-Mode Power MOSFET

Description

The RFD14N05, RFD14N05SM, and RFP14N05 N-channel power MOSFETs are manufactured using the MegaFET process.

This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance.

Features

  • Packaging.
  • 14A, 50V.
  • rDS(ON) = 0.100Ω.
  • Temperature Compensating PSPICE Model.
  • Peak Current vs Pulse Width Curve JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE.
  • UIS Rating Curve.
  • +175oC Operating Temperature.

📥 Download Datasheet

Datasheet Details

Part number F14N05
Manufacturer HARRIS
File Size 85.23 KB
Description Avalanche Rated N-Channel Enhancement-Mode Power MOSFET
Datasheet download datasheet F14N05 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
F14N05 N-Channel Power MOSFET Fairchild Semiconductor
F1400A Clock Oscillator MTRONPTI
F1400NC18 Chopper Diode WESTCODE
F1401 RF POWER VDMOS TRANSISTOR Polyfet RF Devices
F1404L N-Channel 40V MOSFET VBsemi

Other Datasheets by HARRIS

Part Number Description

Full PDF Text Transcription

Click to expand full text
SEMICONDUCTOR RFD14N05, RFD14N05SM, RFP14N05 December 1995 14A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Features Packaging • 14A, 50V • rDS(ON) = 0.100Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE • UIS Rating Curve • +175oC Operating Temperature Description The RFD14N05, RFD14N05SM, and RFP14N05 N-channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers.
Published: |