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HGTP20N60C3R - N-Channel IGBTs

Download the HGTP20N60C3R datasheet PDF. This datasheet also covers the HGTG20N60C3R variant, as both devices belong to the same n-channel igbts family and are provided as variant models within a single manufacturer datasheet.

General Description

This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications.

These devices demonstrate RUGGED performance capability when subjected to harsh SHORT CIRCUIT WITHSTAND TIME (SCWT) conditions.

Key Features

  • 40A, 600V TJ = 25oC.
  • 600V Switching SOA Capability.
  • Typical Fall Time at TJ = 150oC.
  • . . . 330ns.
  • Short Circuit Rating at TJ = 150oC.
  • . . . 10µs.
  • Low Conduction Loss.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HGTG20N60C3R-HARRIS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HGTP20N60C3R
Manufacturer HARRIS
File Size 105.67 KB
Description N-Channel IGBTs
Datasheet download datasheet HGTP20N60C3R Datasheet

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Other Datasheets by HARRIS

Part Number Description
HGTP7N60C3 UFS Series N-Channel IGBT
HGTP7N60C3D UFS Series N-Channel IGBT
HGT1S20N60C3R N-Channel IGBTs
HGT1S20N60C3RS N-Channel IGBTs
HGT1S7N60C3D UFS Series N-Channel IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HGTG20N60C3R, HGTP20N60C3R, S E M I C O N D U C T O R HGT1S20N60C3R, HGT1S20N60C3RS January 1997 40A, 600V, Rugged UFS Series N-Channel IGBTs Features • 40A, 600V TJ = 25oC • 600V Switching SOA Capability • Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . 330ns • Short Circuit Rating at TJ = 150oC . . . . . . . . . . . . . 10µs • Low Conduction Loss Description This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These devices demonstrate RUGGED performance capability when subjected to harsh SHORT CIRCUIT WITHSTAND TIME (SCWT) conditions. The parts have ULTRAFAST (UFS) switching speed while the on-state conduction losses have been kept at a low level.