• Part: HRX2319A
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: HENGRUNXIN
  • Size: 704.03 KB
Download HRX2319A Datasheet PDF
HENGRUNXIN
HRX2319A
Description The HRX2319A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features - VDS = -17V, ID = -6A RDS(ON) < 22mΩ @ VGS=-4.5V RDS(ON) < 32mΩ @ VGS=-2.5V - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Application - PWM applications - Load switch - Power management Schematic diagram Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Pulsed Drain Current (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ,TSTG Thermal Characteristic Thermal Resistance, Junction-to-Ambient (Note 2) RθJA Rating -17 ±12 -6 -24 1.6 -55 To 150 Unit V V A A W ℃ ℃/W .hrxchip. 1/6 Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Off Characteristics Drain-Source Breakdown Voltage...