Datasheet4U Logo Datasheet4U.com
HGSemi logo

2SC2312 Datasheet

Manufacturer: HGSemi
2SC2312 datasheet preview

2SC2312 Details

Part number 2SC2312
Datasheet 2SC2312 Datasheet PDF (Download)
File Size 275.71 KB
Manufacturer HGSemi
Description Silicon NPN POWER TRANSISTOR

2SC2312 Overview

Designed for RF power amplifier on HF band mobile radio applications. T S C B F Q 1 2 3 A H U Z L R J STYLE 1: K Specified 12V, 27MHz Characteristics PO = 18.5W GP = 10.5 dB min.

2SC2312 Key Features

  • HG RF POWER TRANSISTOR

Similar Datasheets

Brand Logo Part Number Description Manufacturer
Mitsubishi Electric Logo 2SC2312 RF POWER TRANSISTOR Mitsubishi Electric
ELEFLOW TECHNOLOGIES 2SC2312 Silicon NPN Transistor ELEFLOW TECHNOLOGIES
Mitsubishi Electric Logo 2SC2312 NPN Silicon Epitaxial Planar Transistor Mitsubishi Electric

2SC2312 Distributor

More datasheets by HGSemi

See all HGSemi parts

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts