2SC2312 Overview
Designed for RF power amplifier on HF band mobile radio applications. T S C B F Q 1 2 3 A H U Z L R J STYLE 1: K Specified 12V, 27MHz Characteristics PO = 18.5W GP = 10.5 dB min.
2SC2312 Key Features
- HG RF POWER TRANSISTOR
| Part number | 2SC2312 |
|---|---|
| Datasheet | 2SC2312 Datasheet PDF (Download) |
| File Size | 275.71 KB |
| Manufacturer | HGSemi |
| Description | Silicon NPN POWER TRANSISTOR |
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Designed for RF power amplifier on HF band mobile radio applications. T S C B F Q 1 2 3 A H U Z L R J STYLE 1: K Specified 12V, 27MHz Characteristics PO = 18.5W GP = 10.5 dB min.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC2312 | RF POWER TRANSISTOR | Mitsubishi Electric |
| ELEFLOW TECHNOLOGIES | 2SC2312 | Silicon NPN Transistor | ELEFLOW TECHNOLOGIES |
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2SC2312 | NPN Silicon Epitaxial Planar Transistor | Mitsubishi Electric |