C2312
Overview
Designed for RF power amplifier on HF band mobile radio applications. T S C B F Q 1 2 3 A H U Z L R J STYLE 1: PIN 1. 2. 3. 4.
- HG RF POWER TRANSISTOR Semiconductors ROHS Compliance,Silicon NPN POWER TRANSISTOR 2SC2312 -T-
- Part: C2312
- Description: Silicon NPN POWER TRANSISTOR
- Category: Transistor
- Manufacturer: HGSemi
- Size: 275.71 KB
Datasheets by Manufacturer
- C2312 — Mitsubishi Electric — 2SC2312
- Q62702-C2312 — Siemens Semiconductor Group — NPN Silicon AF Transistor (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
- D2HW-C231M — OMRON — Smallest Sealed Snap-Action Switch
- C231 — Motorola Semiconductor — Silicon Controlled Rectifier
- C2314 — SANYO — 2SC2314