Datasheet Summary
Features
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HG RF POWER TRANSISTOR
Semiconductors
ROHS pliance,Silicon NPN POWER TRANSISTOR
2SC2312
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SEATING PLANE 4
DESCRIPTION
Designed for RF power amplifier on HF band mobile radio applications.
1 2 3
H U Z L R J
STYLE 1: PIN 1. 2. 3. 4.
Specified 12V, 27MHz Characteristics PO = 18.5W GP = 10.5 dB min. at 18.5 W/27 MHz Emitter ballasted construction
BASE COLLECTOR EMITTER COLLECTOR
DIMENSIONS
UNIT mm inches A 15.75 14.48 0.620 0.570 B 10.28 9.66 0.405 0.380 C 4.82 4.07 0.19 0.16 D 0.88 0.64 0.035 0.025 F 3.73 3.61 0.147 0.142 G 2.66 2.42 0.105 0.095 H 3.93 2.8 0.155 0.110 J 0.64 0.46 0.025 0.018 K 14.27 12.70 0.562 0.500 L 1.52...
