C2312 Description
Designed for RF power amplifier on HF band mobile radio applications. T S C B F Q 1 2 3 A H U Z L R J STYLE 1: K Specified 12V, 27MHz Characteristics PO = 18.5W GP = 10.5 dB min.
C2312 Key Features
- HG RF POWER TRANSISTOR
| Part number | C2312 |
|---|---|
| Download | C2312 Datasheet (PDF) |
| File Size | 275.71 KB |
| Manufacturer | HGSemi |
| Description | Silicon NPN POWER TRANSISTOR |
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| Manufacturer | Part Number | Description |
|---|---|---|
Mitsubishi Electric |
C2312 | 2SC2312 |
Designed for RF power amplifier on HF band mobile radio applications. T S C B F Q 1 2 3 A H U Z L R J STYLE 1: K Specified 12V, 27MHz Characteristics PO = 18.5W GP = 10.5 dB min.