Datasheet Summary
HG RF POWER TRANSISTOR
Semiconductors
ROHS pliance,Silicon NPN POWER TRANSISTOR
. . . designed for 12.5 volt large- signal power amplifiers in mercial and industrial equipment. ω High mon Emitter Power Gain ω Specified 12.5 V, 175 MHz Performance Output Power = 30 Watts Power Gain = 10 dB Efficiency = 60% ω Diffused Emitter Resistor Ballasting ω Characterized to 220 MHz ω Load Mismatch at High Line and Overdrive Conditions MAXIMUM RATINGS
Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current
- Continuous Total Device Dissipation @ TA = 255C Derate above 255C Storage Temperature Range Junction Temperature Symbol VCEO VCBO...
