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HG
HG RF POWER TRANSISTOR
Semiconductors
ROHS Compliance,Silicon NPN POWER TRANSISTOR
MRF1946A
. . . designed for 12.5 volt large–signal power amplifiers in commercial and industrial equipment. ω High Common Emitter Power Gain ω Specified 12.5 V, 175 MHz Performance Output Power = 30 Watts Power Gain = 10 dB Efficiency = 60% ω Diffused Emitter Resistor Ballasting ω Characterized to 220 MHz ω Load Mismatch at High Line and Overdrive Conditions MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 255C Derate above 255C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Characteristic Thermal Resistance, Junction to Case Value 16 36 4.0 8.0 100 0.