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MRF448 Datasheet PDF

HGSemi MRF448

HG RF POWER TRANSISTOR

Part No. MRF448
Datasheet MRF448 Download
Manufacturer
HGSemi
Description HG RF POWER TRANSISTOR
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MRF448 datasheet page 1 preview

MAXIMUM RATINGS

Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Withstand Current — 10 s Total Device Dissipation @ TC = 255C (1) Derate above 255C Storage Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS

(TC = 255C unless otherwise noted.) Characteristic Symbol OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 10 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 50 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS Common–Emitter Amplifier Power Gain (VCC = 50 Vdc, Pout = 250 W CW, f = 30 MHz, ICQ = 250 mA) Collector Efficiency (VCC = 50 Vdc, Pout = 250 W, f = 30 MHz, I...