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MRF455 - HG RF POWER TRANSISTOR

General Description

The MRF455 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for land mobile transmitter applications.

This device utilizes emitter ballasting and is extremely stable and capable of withstanding high VSWR under operating conditions.

Key Features

  • Specified 12.5V, 30MHz Characteristics.
  • PO = 70W.
  • GP = 13 dB min. at 70 W/30 MHz.
  • Omnigold™ Metalization System.

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Datasheet Details

Part number MRF455
Manufacturer HGSemi
File Size 299.34 KB
Description HG RF POWER TRANSISTOR
Datasheet download datasheet MRF455 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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H GSemiconductors HG RF POWER TRANSISTOR MRF455 ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION The MRF455 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting and is extremely stable and capable of withstanding high VSWR under operating conditions. FEATURES • Specified 12.5V, 30MHz Characteristics • PO = 70W • GP = 13 dB min. at 70 W/30 MHz • Omnigold™ Metalization System DIMENSIONS D A F qC U1 B H 4 α L 3 w2 M C b A 1.Collector 2.EMITTER 3.BASE 4.EMITTER 5.FIN c 1 H p U2 5 w1 M A B 2 U3 Q NOTE: ALL ELECTRODES ARE ISOLATED FROM FLANCE. UNIT A b c D D1 F HL p Q q U1 mm 7.47 6.37 inches 0.294 0.251 5.82 5.56 0.229 0.219 0.18 0.10 0.007 0.004 9.73 9.