Datasheet4U Logo Datasheet4U.com

SD1446 - HG RF POWER TRANSISTOR

Datasheet Summary

Description

The SD1446 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for land mobile transmitter applications.

This device utilizes emitter ballasting and is extremely stable and capable of withstanding high VSWR under operating conditions.

Features

  • Specified 12.5V, 50MHz Characteristics.
  • PO = 70W.
  • GP = 10 dB min. at 70 W/50 MHz.
  • Omnigold™ Metalization System.

📥 Download Datasheet

Datasheet preview – SD1446

Datasheet Details

Part number SD1446
Manufacturer HGSemi
File Size 286.78 KB
Description HG RF POWER TRANSISTOR
Datasheet download datasheet SD1446 Datasheet
Additional preview pages of the SD1446 datasheet.

📁 Similar Datasheet

  • SD1446 - RF & MICROWAVE TRANSISTORS (STMicroelectronics)
  • SD1441 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
  • SD1444 - RF & MICROWAVE TRANSISTORS (Microsemi Corporation)
  • SD1444 - RF & MICROWAVE TRANSISTORS (Advanced Power Technology)
  • SD1448 - RF & MICROWAVE TRANSISTORS (STMicroelectronics)
  • SD1449 - RF & MICROWAVE TRANSISTORS (STMicroelectronics)
  • SD14-100-R - Low profile metalized shielded drum core power inductors (Eaton)
  • SD14-101-R - Low profile metalized shielded drum core power inductors (Eaton)
  • SD14-102-R - Low profile metalized shielded drum core power inductors (Eaton)
  • SD14-150-R - Low profile metalized shielded drum core power inductors (Eaton)
Other Datasheets by HGSemi
  • SD1143 - HG RF POWER TRANSISTOR
  • SD1219 - HG RF POWER TRANSISTOR
  • SD1272 - HG RF POWER TRANSISTOR

Full PDF Text Transcription

Click to expand full text
HG Semiconductors HG RF POWER TRANSISTOR SD1446 ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION The SD1446 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting and is extremely stable and capable of withstanding high VSWR under operating conditions. FEATURES • Specified 12.5V, 50MHz Characteristics • PO = 70W • GP = 10 dB min. at 70 W/50 MHz • Omnigold™ Metalization System DIMENSIONS D 1.Collector A 2.EMITTER F 3.BASE q U1 C B 4.EMITTER 5.FIN H 4 α L 3 w2 M C b A c 1 H p U2 5 w1 M A B 2 U3 Q NOTE: ALL ELECTRODES ARE ISOLATED FROM FLANCE. UNIT A b c D D1 F HL p Q q U1 mm 7.47 6.37 inches 0.294 0.251 5.82 5.56 0.229 0.219 0.18 0.10 0.007 0.
Published: |