SFD3008T - 30V N-CHANNEL MOSFET

HI-SEMICON

Download the SFD3008T datasheet PDF. This datasheet also covers the SFD3008T-HI variant, as both devices belong to the same 30v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

80A,30V,RDS(on)(typ. )=4.8m@VGS=10V.
Excellent package for good heat dissipation.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
High density cell design for ultra low Rdson.
Special process technology for high ESD capability.
Exceptional on-resistance and maximum DC currentcapability SFD3008T.

📥 Download Datasheet

SFD3008T 30v n-channel mosfet by HI-SEMICON - Datasheet Preview — Note: The manufacturer provides a single datasheet file (SFD3008T-HI-SEMICON.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	SFD3008T
Manufacturer	HI-SEMICON
File Size	1.25 MB
Description	30V N-CHANNEL MOSFET
Datasheet	SFD3008T Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

80A, 30V N-CHANNEL MOSFET GENERAL DESCRIPTION The SFD3008T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES ◆ 80A,30V,RDS(on)(typ.)=4.8m@VGS=10V ◆ Excellent package for good heat dissipation ◆ Fully characterized avalanche voltage and current ◆ Good stability and uniformity with high EAS ◆ High density cell design for ultra low Rdson ◆ Special process technology for high ESD capability ◆ Exceptional on-resistance and maximum DC currentcapability SFD3008T ORDERING INFORMATION Part No.