SFS4525T Datasheet | HI-SEMICON

N AND P-CHANNEL MOSFET GENERAL DESCRIPTION The SFS4525T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features - N-CHANNEL VDS=40V,ID=8A RDS(ON)=15.0mΩ(TYP@VGS=10V) RDS(ON)=18.7mΩ(TYP@VGS=4.5V) - P-CHANNEL VDS=-40V,ID=-7A RDS(ON)=28.9mΩ(TYP@VGS=-10V) RDS(ON)=38.2mΩ(TYP@VGS=-4.5V) - High density cell design for ultra low Rdson - Secial process technology for high ESD capability - Exceptional on-resistance and maximum DC Cueeentcapability ORDERING INFORMATION Part No. Package SOP-8 Marking SFS4525T Material Pb Free Packing Reel Http://.hi-semicon. Rev 1.1 Page 1 of...