SFS4525T Description
The SFS4525T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
SFS4525T Key Features
- N-CHANNEL
- P-CHANNEL VDS=-40V,ID=-7A RDS(ON)=28.9mΩ(TYP@VGS=-10V) RDS(ON)=38.2mΩ(TYP@VGS=-4.5V)
- High density cell design for ultra low Rdson
- Secial process technology for high ESD capability
- Exceptional on-resistance and maximum DC Cueeentcapability