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SFX18N50 - 500V N-CHANNEL MOSFET

This page provides the datasheet information for the SFX18N50, a member of the SFX18N50-HI 500V N-CHANNEL MOSFET family.

Description

These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe DMOS technology.

Features

  • 18A,500V,RDS(ON)(typ)=0.26@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 12 3 TO-220F-3L 123 TO-220-3L.

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Datasheet preview – SFX18N50

Datasheet Details

Part number SFX18N50
Manufacturer HI-SEMICON
File Size 1.08 MB
Description 500V N-CHANNEL MOSFET
Datasheet download datasheet SFX18N50 Datasheet
Additional preview pages of the SFX18N50 datasheet.

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Full PDF Text Transcription

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SFX18N50 18A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies,active power factor correction,electronic lamp ballasts based on half bridge 2 1 3 1.Gate 2.Drain 3.Source TO-3PN FEATURES ◆ 18A,500V,RDS(ON)(typ)=0.26@VGS=10V ◆ Low gate charge ◆ Low Crss ◆ Fast switching ◆ Improved dv/dt capability 12 3 TO-220F-3L 123 TO-220-3L NOMENCLATURE ORDERING INFORMATION Part No.
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