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SFX20N60 - 600V N-CHANNEL POWER MOSFET

This page provides the datasheet information for the SFX20N60, a member of the SFX20N60-HI 600V N-CHANNEL POWER MOSFET family.

Description

These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology.

Features

  • VDS(V)=600V, ID=20A.
  • RDS(ON) TYP:0.32Ω@VGS=10V ID=10A MAX:0.4Ω.

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Datasheet preview – SFX20N60

Datasheet Details

Part number SFX20N60
Manufacturer HI-SEMICON
File Size 750.57 KB
Description 600V N-CHANNEL POWER MOSFET
Datasheet download datasheet SFX20N60 Datasheet
Additional preview pages of the SFX20N60 datasheet.

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Full PDF Text Transcription

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20A, 600V N-CHANNEL POWER MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features ◆VDS(V)=600V, ID=20A ◆RDS(ON) TYP:0.32Ω@VGS=10V ID=10A MAX:0.
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