SFX20N60
Description
These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology.
Key Features
- VDS(V)=600V, ID=20A
- RDS(ON) TYP:0.32Ω@VGS=10V ID=10A MAX:0.4Ω
Applications
- Power faction correction (PFC)
