SFX20N60 Key Features
- VDS(V)=600V, ID=20A -RDS(ON) TYP:0.32Ω@VGS=10V ID=10A MAX:0.4Ω
- Part: SFX20N60
- Manufacturer: HI-SEMICON
- Size: 750.57 KB
Related HI-SEMICON Datasheets
| Part Number | Description |
|---|---|
| SFX18N50 | 500V N-CHANNEL MOSFET |
| SFX33N10 | 100V N-CHANNEL MOSFET |
| SFX3N50 | 500V N-CHANNEL POWER MOSFET |
| SFX3N50TS | 500V N-CHANNEL POWER MOSFET |
| SFX5N50 | 500V N-CHANNEL POWER MOSFET |
SFX20N60 Description
These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies,...