SFX5N50TS
Description
These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, VDMOS technology.
Key Features
- VDS(V)=500V, ID=5A
- RDS(on) TYP:1.28Ω@VGS=10V ID=2A MAX:1.6Ω
Applications
- Power faction correction (PFC)
