SFX6N60 Key Features
- 6A,600V,RDS(on(typ)=1.35@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability
- Part: SFX6N60
- Manufacturer: HI-SEMICON
- Size: 608.69 KB
Related HI-SEMICON Datasheets
| Part Number | Description |
|---|---|
| SFX18N50 | 500V N-CHANNEL MOSFET |
| SFX20N60 | 600V N-CHANNEL POWER MOSFET |
| SFX33N10 | 100V N-CHANNEL MOSFET |
| SFX3N50 | 500V N-CHANNEL POWER MOSFET |
| SFX3N50TS | 500V N-CHANNEL POWER MOSFET |
SFX6N60 Description
These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies,...