SFX6N60 Datasheet PDF (600V N-CHANNEL MOSFET)

SFX6N60 - 600V N-CHANNEL MOSFET

This page provides the datasheet information for the SFX6N60, a member of the SFX6N60-HI 600V N-CHANNEL MOSFET family.

Description

These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology.

Features

6A,600V,RDS(on(typ)=1.35@VGS=10V.
Low gate charge.
Low Crss.
Fast switching.
Improved dv/dt capability.

Datasheet Details

Part number	SFX6N60
Manufacturer	HI-SEMICON
File Size	608.69 KB
Description	600V N-CHANNEL MOSFET
Datasheet	SFX6N60 Datasheet
Additional preview pages of the SFX6N60 datasheet.

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Full PDF Text Transcription

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SFX6N60 6A 600V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology FEATURES ◆ 6A,600V,RDS(on(typ)=1.35@VGS=10V ◆ Low gate charge ◆ Low Crss ◆ Fast switching ◆ Improved dv/dt capability NOMENCLATURE 2 1 3 1.Gate 2.Drain 3.Source TO-251J-3L TO-252-2L TO-220F-3L ORDERING INFORMATION Part No.

Published: Mar 20, 2025 |