SFX6N60 Overview
These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies,...
SFX6N60 Key Features
- 6A,600V,RDS(on(typ)=1.35@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability