SFX7N50 Overview
These N-Channel enhancement mode power field effect transistors are produced using advanced technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
SFX7N50 Key Features
- ID=7A , VDS=500V -RDS(ON) TYP: 0.68Ω@VGS=10V ID=3.5A MAX: 0.90Ω