SGM031R7T Description
The SGM031R7T uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety applications.
SGM031R7T Key Features
- VDS=30V,ID=150A -RDS(on) TYP:1.4mΩ@VGS=10V
SGM031R7T is 150A N-CHANNEL POWER MOSFET manufactured by HI-SEMICON.
The SGM031R7T uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety applications.