H01N45A Overview
HI-SINCERITY MICROELECTRONICS CORP. H01N45A N-Channel Power Field Effect Transistor.
H01N45A Key Features
- Typical RDS(on)=4.1Ω
- Extremely High dv/dt Capability
- 100% Avalanche Tested
- Gate Charge Minimized
- New High Voltage Benchmark
H01N45A datasheet by HI-SINCERITY.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | H01N45A |
|---|---|
| Datasheet | H01N45A H01N45A-HI Datasheet (PDF) |
| File Size | 44.18 KB |
| Manufacturer | HI-SINCERITY |
| Description | N-Channel Power Field Effect Transistor |
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HI-SINCERITY MICROELECTRONICS CORP. H01N45A N-Channel Power Field Effect Transistor.
View all HI-SINCERITY datasheets
| Part Number | Description |
|---|---|
| H01N60 | N-Channel Power Field Effect Transistor |