H01N45A Datasheet N-Channel Power Field Effect Transistor

Manufacturer: HI-SINCERITY

Download the H01N45A datasheet PDF. This datasheet also includes the H01N45A-HI variant, as both parts are published together in a single manufacturer document.

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H01N45A n-channel power field effect transistor by HI-SINCERITY - Datasheet Preview — Note: The manufacturer provides a single datasheet file (H01N45A-HI-SINCERITY.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	H01N45A
Manufacturer	HI-SINCERITY
File Size	44.18 KB
Description	N-Channel Power Field Effect Transistor
Datasheet	H01N45A Datasheet

Overview

HI-SINCERITY MICROELECTRONICS CORP.

H01N45A N-Channel Power Field Effect.

Key Features

Typical RDS(on)=4.1Ω.
Extremely High dv/dt Capability.
100% Avalanche Tested.
Gate Charge Minimized.
New High Voltage Benchmark.

More Datasheets from HI-SINCERITY

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H01N60	N-Channel Power Field Effect Transistor