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H01N45A - N-Channel Power Field Effect Transistor

This page provides the datasheet information for the H01N45A, a member of the H01N45A-HI N-Channel Power Field Effect Transistor family.

Datasheet Summary

Features

  • Typical RDS(on)=4.1Ω.
  • Extremely High dv/dt Capability.
  • 100% Avalanche Tested.
  • Gate Charge Minimized.
  • New High Voltage Benchmark.

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Datasheet preview – H01N45A

Datasheet Details

Part number H01N45A
Manufacturer HI-SINCERITY
File Size 44.18 KB
Description N-Channel Power Field Effect Transistor
Datasheet download datasheet H01N45A Datasheet
Additional preview pages of the H01N45A datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. H01N45A N-Channel Power Field Effect Transistor Features • Typical RDS(on)=4.
Published: |