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H02N60SE - N-Channel Power FET

Download the H02N60SE datasheet PDF. This datasheet also covers the H02N60S-HI variant, as both devices belong to the same n-channel power fet family and are provided as variant models within a single manufacturer datasheet.

General Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

Key Features

  • Robust High Voltage Termination.
  • Avalanc he Energy Specified.
  • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode.
  • Diode is Characterized for Use in Bridge Circuits.
  • IDSS and VDS(on) Specified at Elevated Temperature Absolute Maximum Ratings H02N60S Series Pin Assignment Tab 3 2 1 Tab 3 2 Tab 1 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 3-Lead Plastic TO-251 Package Code: I Pin 1.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H02N60S-HI-SINCERITY.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H02N60SE
Manufacturer HI-SINCERITY
File Size 73.78 KB
Description N-Channel Power FET
Datasheet download datasheet H02N60SE Datasheet

Full PDF Text Transcription for H02N60SE (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for H02N60SE. For precise diagrams, and layout, please refer to the original PDF.

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel Power Field Effect Tr...

View more extracted text
05.09.28 Page No. : 1/6 H02N60S Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time.

More Datasheets from HI-SINCERITY

Part Number Description
H02N60S N-Channel Power FET
H02N60SF N-Channel Power FET
H02N60SI N-Channel Power FET
H02N60SJ N-Channel Power FET