H07N60E Datasheet PNP Epitaxial Planar Transistor

Manufacturer: HI-SINCERITY

Overview: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :HSP200204 Issued Date : 1998.01.06 Revised Date : 2002.03.26 Page No.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	H07N60E
Manufacturer	HI-SINCERITY
File Size	23.64 KB
Description	PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet	H07N60E H07N60E-HI Datasheet (PDF)

The HSA733 is designed for use in driver stage of AF amplifier.

High hFE and Excellent Linearity: 200 Typ. hFE(VCE=6.0,IC=1.0mA) Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 250 mW.
Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage -60 V VCEO Collector to Emitter Voltage.

Part Number	Description
H07N60F	PNP EPITAXIAL PLANAR TRANSISTOR