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H2305N - P-Channel Enhancement-Mode MOSFET

Download the H2305N datasheet PDF. This datasheet also covers the H2305N-HI variant, as both devices belong to the same p-channel enhancement-mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The Advanced Power MOSFETS from APEC provide the designer with the best combination of fast switching low on-resistance and cost-effectiveness.

Key Features

  • RDS(on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H2305N-HI-SINCERITY.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H2305N
Manufacturer HI-SINCERITY
File Size 203.57 KB
Description P-Channel Enhancement-Mode MOSFET
Datasheet download datasheet H2305N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. H2305N P-Channel Enhancement-Mode MOSFET (-20V, -4.5A) Features • RDS(on)<58mΩ@VGS=-4.5V, ID=-4.2A • RDS(on)<71mΩ@VGS=-2.5V, ID=-2A • Simple Drive Requirement • Small Package Outline • ISurface Mount Device Spec. No. : MOS200807 Issued Date : 2008.11.12 Revised Date :2009,12,15 Page No. : 1/5 H2305N Pin Assignment & Symbol 3 12 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain Source Gate Drain Description The Advanced Power MOSFETS from APEC provide the designer with the best combination of fast switching low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage, applications such as DC/DC converters.