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H8205A Datasheet Dual N-channel Enhancement-mode MOSFET

Manufacturer: HI-SINCERITY

Overview: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200905 Issued Date : 2009.02.27 Revised Date : Page No.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number H8205A
Manufacturer HI-SINCERITY
File Size 94.67 KB
Description Dual N-Channel Enhancement-Mode MOSFET
Datasheet H8205A H8205A-HI Datasheet (PDF)

General Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process.

It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V)

Key Features

  • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A.
  • High Density Cell Design for Ultra Low On-Resistance.
  • High Power and Current Handing Capability.
  • Fully Characterized Avalanche Voltage and Current.
  • Ideal for Li ion Battery Pack.

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