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HT666 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HT666 datasheet PDF. This datasheet also covers the HT666-HI variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HT666 is designed for general purpose amplifier and high-speed,mediumpower switching applications.

Key Features

  • High Frequency Current Gain.
  • High Speed Switching Transistor TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
  • Maximum Voltages and Currents (TA=25°C) BVCBO Collector to Base Voltage 75 V BVCEO Collector to Emitter Voltage 40 V BVEBO Emitter to Base Voltage 6 V IC Collector Current 600 mA Electrical Cha.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HT666-HI-SINCERITY.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HT666
Manufacturer HI-SINCERITY
File Size 43.81 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HT666 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HT666 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6464 Issued Date : 1993.09.07 Revised Date : 2005.02.15 Page No. : 1/4 Description The HT666 is designed for general purpose amplifier and high-speed,mediumpower switching applications. Features • High Frequency Current Gain • High Speed Switching Transistor TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ......................