Datasheet4U Logo Datasheet4U.com

TBB1002 - Twin Build in Biasing Circuit MOS FET

Key Features

  • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier. Very useful for total tuner cost reduction. Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
  • Provide mini mold packages; CMPAK-6 Outline CMPAK-6 6 5 4 2 1 3 1. Gate-1(1) 2. Source 3. Drain(1) 4. Drain(2) 5. Gate-2 6. Gate-1(2) Notes: 1. 2. Ma.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TBB1004 Twin Build in Biasing Circuit MOS FET IC Hitachi Semiconductor
TBB1005 Twin Built in Biasing Circuit MOS FET IC Renesas
TBB1008 Twin Built in Biasing Circuit MOS FET IC Renesas
TBB1010 Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier Renesas Technology
TBB1012 Twin Built in Biasing Circuit MOS FET IC Renesas Technology

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TBB1002 Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-987F (Z) 7th. Edition Dec. 2000 Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier. Very useful for total tuner cost reduction. Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. • Provide mini mold packages; CMPAK-6 Outline CMPAK-6 6 5 4 2 1 3 1. Gate-1(1) 2. Source 3. Drain(1) 4. Drain(2) 5. Gate-2 6. Gate-1(2) Notes: 1. 2. Marking is “BM”. TBB1002 is individual type number of HITACHI TWIN BBFET.