• Part: TBB1002
  • Description: Twin Build in Biasing Circuit MOS FET
  • Manufacturer: Hitachi Semiconductor
  • Size: 66.20 KB
Download TBB1002 Datasheet PDF
Hitachi Semiconductor
TBB1002
TBB1002 is Twin Build in Biasing Circuit MOS FET manufactured by Hitachi Semiconductor.
Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-987F (Z) 7th. Edition Dec. 2000 Features - - - - Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier. Very useful for total tuner cost reduction. Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. - Provide mini mold packages; CMPAK-6 Outline CMPAK-6 2 1 1. Gate-1(1) 2. Source 3. Drain(1) 4. Drain(2) 5. Gate-2 6. Gate-1(2) Notes: 1. 2. Marking is “BM”. TBB1002 is individual type number of HITACHI TWIN...