HM5NC65AF
Features
:
- Low Intrinsic Capacitances.
- Excellent Switching Characteristics.
- Extended Safe Operating Area.
- Unrivalled Gate Charge :Qg= 10n C (Typ.).
- BVDSS=650V,ID=5A
- RDS(on) : 0.9Ω (Max) @VG=10V
- 100% Avalanche Tested
HM5NC65AP TO-220
TO-220F
1.Gate (G) 2.Drain (D) 3.Source (S)
Absolute Maximum Ratings (TC=25℃)
Parameter
Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) Drain Source voltage slope, VDS = 480 V, ID =5 A, Tj = 125 °C Maximum Power Dissipation(Tc=25℃)
Derate above 25°C
Single pulse avalanche energy (Note2) Avalanche current(Note 1) Repetitive Avalanche energy ，t AR limited by Tjmax
(Note 1)
Operating Junction and Storage Temperature Range
Symbol VDS VGS ID (DC) ID (DC)
IDM (pluse) dv/dt
EAS IAR EAR TJ,TSTG
HM5NC65AP HM5NC65AF
±30
5-
3-
15-...
