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HY030N06MF - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the HY030N06MF, a member of the HY030N06P N-Channel Enhancement Mode MOSFET family.

Datasheet Summary

Description

GDS TO-220FB-3L G DS TO-3PS-3L GDS TO-220MF-3L Applications Switching application Power management for inverter systems Ordering and Marking Information N-Channel MOSFET P HY030N06 YYXXXJWW G MF HY030N06 YYXXXJWW G PS HY030N06 YYXXXJWW G Package Code P :TO-220FB-3L PS:TO-3PS-3L

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Datasheet Details

Part number HY030N06MF
Manufacturer HOOYI
File Size 937.98 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY030N06MF Datasheet
Additional preview pages of the HY030N06MF datasheet.

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Full PDF Text Transcription

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HY030N06P/MF/PS Feature  65V/140A RDS(ON)= 2.4 mΩ(typ.)@VGS = 10V RDS(ON)= 3.7 mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Lead- Free Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description GDS TO-220FB-3L G DS TO-3PS-3L GDS TO-220MF-3L Applications  Switching application  Power management for inverter systems Ordering and Marking Information N-Channel MOSFET P HY030N06 YYXXXJWW G MF HY030N06 YYXXXJWW G PS HY030N06 YYXXXJWW G Package Code P :TO-220FB-3L PS:TO-3PS-3L Date Code YYXXX WW MF:TO-220MF-3L Assembly Material G:Lead Free Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.
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