HY1503C1 - N-Channel Enhancement Mode MOSFET

HOOYI

General Description

DDDD Pin1 GSSS DFN3 3-8L Applications Switching Application Power Management for DC/DC Battery Protection Ordering and Marking Information Single N-Channel MOSFET C1 HY1503 YYXXXJWW Package Code C1: DFN3 3-8L Date Code YYXXX WW Note: HUAYI lead-free products contain

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Datasheet Details

Part number	HY1503C1
Manufacturer	HOOYI
File Size	660.45 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	HY1503C1 Datasheet

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HY1503C1 Single N-Channel Enhancement Mode MOSFET Feature  30V/34A RDS(ON)= 7.1mΩ(typ.)@VGS = 10V RDS(ON)= 10.0 mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description DDDD Pin1 GSSS DFN3*3-8L Applications  Switching Application  Power Management for DC/DC  Battery Protection Ordering and Marking Information Single N-Channel MOSFET C1 HY1503 YYXXXJWW Package Code C1: DFN3*3-8L Date Code YYXXX WW Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.