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HY1503C1 Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HOOYI

Overview: HY1503C1 Single N-Channel Enhancement Mode MOSFET Feature  30V/34A RDS(ON)= 7.1mΩ(typ.)@VGS = 10V RDS(ON)= 10.0 mΩ(typ.)@VGS = 4.

Datasheet Details

Part number HY1503C1
Manufacturer HOOYI
File Size 660.45 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet HY1503C1-HOOYI.pdf

General Description

DDDD Pin1 GSSS DFN3*3-8L Applications  Switching Application  Power Management for DC/DC  Battery Protection Ordering and Marking Information Single N-Channel MOSFET C1 HY1503 YYXXXJWW Package Code C1: DFN3*3-8L Date Code YYXXX WW Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully pliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free require- ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HUAYI defines “Green” to mean lead-free (RoHS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

HY1503C1 Distributor