HY1808P
HY1808P is N-Channel MOSFET manufactured by HOOYI.
Features
- 75V/85A,
RDS(ON)= 8 m Ω (typ.) @ VGS=10V
- Avalanche Rated
- Reliable and Rugged
- Lead Free and Green Devices Available
(Ro HS pliant)
Pin Description
Applications
- Power Management for Inverter Systems.
Ordering and Marking Information
N-Channel MOSFET
P HY1808
ÿYYWWJ G
Package Code
P : TO220-3L Date Code YYWW Assembly Material G : Lead Free Device
Note:
HOOYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate termination finish; which are fully pliant with Ro HS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
1 .hooyi-semi.
Absolute Maximum Ratings
Symbol
Parameter mon Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage VGSS Gate-Source Voltage
TJ Maximum Junction Temperature TSTG Storage Temperature Range
IS Diode Continuous Forward Current Mounted on Large Heat Sink
IDP 300µs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings EAS Avalanche Energy, Single Pulsed Note
- VD=50V
TC=25°C
TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C
L=0.3m H
Rating
75 ±25 175 -55 to 175 85
360 85 68 300 185 0.5...