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HY1808P - N-Channel MOSFET

Description

G D S D Applications

Power Management for Inverter Systems.

Features

  • 75V/85A, RDS(ON)= 8 m Ω (typ. ) @ VGS=10V.
  • Avalanche Rated.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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Datasheet preview – HY1808P

Datasheet Details

Part number HY1808P
Manufacturer HOOYI
File Size 744.06 KB
Description N-Channel MOSFET
Datasheet download datasheet HY1808P Datasheet
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Full PDF Text Transcription

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HY1808P N-Channel Enhancement Mode MOSFET Features • 75V/85A, RDS(ON)= 8 m Ω (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description G D S D Applications • Power Management for Inverter Systems. G Ordering and Marking Information S N-Channel MOSFET P HY1808 ÿYYWWJ G Package Code P : TO220-3L Date Code YYWW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature.
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