HY1906B Datasheet | HOOYI

HY1906P/B N-Channel Enhancement Mode MOSFET Features - 60V / 120 A , RDS(ON)= 6.0 mΩ (typ.) @ V =10V GS - Avalanche Rated - Reliable and Rugged - Lead Free and Green Devices Available (RoHS pliant) Pin Description DS G TO-220FB-3L DS G TO-263-2L Applications - Power Management for Inverter Systems. G N-Channel MOSFET Ordering and Marking Information PB HY1906 HY1906 YYÿ XXXJWW G YYÿ XXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW B: TO-263-2L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate termination finish; which are fully pliant with RoHS. HOOYI lead-free...