Datasheet4U Logo Datasheet4U.com

HY3003B - N-Channel MOSFET

Download the HY3003B datasheet PDF. This datasheet also covers the HY3003 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

DS G TO-220FB-3L DS G TO-263-2L Applications High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Ordering and Marking Information D G N-Channel MOSFET S

Key Features

  • 30V/100A RDS(ON)= 3.5mΩ (typ. ) @ VGS=10V.
  • 100% EAS Guaranteed.
  • Super Low Gate Charge.
  • Excellent CdV/dt effect decline.
  • Advanced high cell density Trench technology.
  • Halogen - Free Device Available Pin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY3003-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY3003B
Manufacturer HOOYI
File Size 648.21 KB
Description N-Channel MOSFET
Datasheet download datasheet HY3003B Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HY3003D N-Channel Enhancement Mode MOSFET HUAYI
HY3003U N-Channel Enhancement Mode MOSFET HUAYI
HY3003V N-Channel Enhancement Mode MOSFET HUAYI
HY3008MF N-Channel Enhancement Mode MOSFET HUAYI
HY3008PL N-Channel Enhancement Mode MOSFET HUAYI

Other Datasheets by HOOYI

Part Number Description
HY3003 N-Channel MOSFET
HY3003P N-Channel MOSFET
HY3007B N-Channel Enhancement Mode MOSFET
HY3007M N-Channel Enhancement Mode MOSFET
HY3007P N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HY3003P/B N-Channel Enhancement Mode MOSFET Features • 30V/100A RDS(ON)= 3.5mΩ (typ.