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HY3007P - N-Channel Enhancement Mode MOSFET

General Description

DS G TO-220FB-3L DS G TO-220FB-3S G DS TO-263-2L Applications

Power Management for Inverter Systems.

Key Features

  • 68V / 120 A RDS(ON)= 5.0 m (typ. ) @ V =10V GS.
  • Avalanche Rated.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin.

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Datasheet Details

Part number HY3007P
Manufacturer HOOYI
File Size 809.28 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY3007P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HY3007P/M/B/PS/PM Features • 68V / 120 A RDS(ON)= 5.0 m (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description DS G TO-220FB-3L DS G TO-220FB-3S G DS TO-263-2L Applications  Power Management for Inverter Systems. DS G TO-3PS-3L DS G TO-3PM-3S Ordering and Marking Information N-Channel MOSFET P HY3007 XYMXXXXXX PS HY3007 XYMXXXXXX M HY3007 XYMXXXXXX PM HY3007 XYMXXXXXX B HY3007 XYMXXXXXX Package Code P : TO-220FB-3L B: TO-263-2L PM: TO-3PM-3S M : TO-220FB-3M PS: TO-3PS-3L Date Code XYMXXXXXX Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS.