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HY3010P - N-Channel Enhancement Mode MOSFET

General Description

TO-220FB-3L TO-263-2L Ordering and Marking Information P HY3010 YYXXXJWWG B HY3010 YYXXXJWWG N-Channel MOSFET Package Code P :TO-220FB-3L Date Code YYXXX WW B:TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; wh

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Datasheet Details

Part number HY3010P
Manufacturer HOOYI
File Size 400.10 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY3010P Datasheet

Full PDF Text Transcription for HY3010P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY3010P. For precise diagrams, and layout, please refer to the original PDF.

HY3010P/B Feature 100V/100A RDS(ON)=10mΩ(typ.) @VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Available (RoHS Compliant) Applicati...

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ged  Lead-Free and Green Devices Available (RoHS Compliant) Applications  Power Switching application  Uninterruptible Power Supply N-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L TO-263-2L Ordering and Marking Information P HY3010 YYXXXJWWG B HY3010 YYXXXJWWG N-Channel MOSFET Package Code P :TO-220FB-3L Date Code YYXXX WW B:TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at l