• Part: HY3208A
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HOOYI
  • Size: 906.72 KB
Download HY3208A Datasheet PDF
HOOYI
HY3208A
HY3208AP/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 80 ±25 175 55 to- 175 120 IDM Pulsed Drain Current - ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 480- - 120 85 227 113 0.66 62.5 EAS Avalanche Energy, Single Pulsed L=0.5m H Note - Repetitive rating ; pulse width limiited by junction temperature - - Drain current is limited by junction temperature - - - VD=64V 630- - - Electrical Characteristics (T C = 25°C Unless Otherwise Noted) Unit V °C °C A A A W °C/W m J Symbol Parameter Test Conditions Static Characteristics BVDSS Drain-Source Breakdown...