HY3506W
HY3506W is N-Channel Enhancement Mode MOSFET manufactured by HOOYI.
- Part of the HY3506P comparator family.
- Part of the HY3506P comparator family.
Features
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60V/190A RDS(ON) = 3.0 mΩ (typ.) @ VGS=10V
Pin Description
100% avalanche tested
Reliable and Rugged Lead Free and Green Devices Available (Ro HS pliant)
TO-220
TO-247
Applications
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Switching application
Power Management for Inverter Systems.
N-Channel MOSFET
Ordering and Marking Information
Package Code
ÿ YYXXXJWW G
P HY3506
ÿ YYXXXJWW G
W HY3506
P : TO220-3L Date Code YYXXX WW Assembly Material G : Lead Free Device
W : TO247-3L
Note:
HOOYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate termination finish; which are fully pliant with Ro HS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
.hooyi-semi.
HY3506P/W
Absolute Maximum Ratings
Symbol VDSS VGSS TJ TSTG IS IDM ID PD RθJC RθJA EAS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Pulsed Drain Current
- Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Parameter Rating 60 ±25 175 -55 to 175 190 750-
- 190 132 306 153 0.49 62.5 °C °C A A A W °C/W Unit mon Ratings (TA=25°C Unless Otherwise Noted)...