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HY3506W Datasheet

Manufacturer: HOOYI

This datasheet includes multiple variants, all published together in a single manufacturer document.

HY3506W datasheet preview

Datasheet Details

Part number HY3506W
Datasheet HY3506W HY3506P Datasheet (PDF)
File Size 1.42 MB
Manufacturer HOOYI
Description N-Channel Enhancement Mode MOSFET
HY3506W page 2 HY3506W page 3

HY3506W Overview

100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS pliant) G D G S D S TO-220 D TO-247 Applications Switching application Power Management for Inverter Systems. S G N-Channel MOSFET Ordering and Marking Information Package Code ÿ YYXXXJWW G P HY3506 ÿ YYXXXJWW G W HY3506 P : TO220-3L Date Code YYXXX WW Assembly Material G.

HY3506W Key Features

  • 60V/190A RDS(ON) = 3.0 mΩ (typ.) @ VGS=10V

HY3506B from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
HUAYI Logo HY3506B N-Channel MOSFET HUAYI
HUAYI Logo HY3506P N-Channel MOSFET HUAYI
HOOYI logo - Manufacturer

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HY3506W Distributor

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