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HY3606 - N-Channel MOSFET

General Description

DS G TO-220FB-3L DS G TO-263-2L Applications Switching application

Power Management for Inverter Systems.

Key Features

  • 60V/162A RDS(ON) = 3.5 mΩ (typ. ) @ VGS=10V.
  • 100% avalanche tested.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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Datasheet Details

Part number HY3606
Manufacturer HOOYI
File Size 3.78 MB
Description N-Channel MOSFET
Datasheet download datasheet HY3606 Datasheet

Other Datasheets by HOOYI

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HY3606P/B N-Channel Enhancement Mode MOSFET Features • 60V/162A RDS(ON) = 3.5 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-263-2L Applications • Switching application • Power Management for Inverter Systems. D G N-Channel MOSFET Ordering and Marking Information S PB HY3606 HY3606 YYÿ XXXJWW G YYÿ XXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW B: TO-263-2L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.