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HY3712B - N-Channel MOSFET

This page provides the datasheet information for the HY3712B, a member of the HY3712P N-Channel MOSFET family.

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Datasheet Details

Part number HY3712B
Manufacturer HOOYI
File Size 787.21 KB
Description N-Channel MOSFET
Datasheet download datasheet HY3712B Datasheet
Additional preview pages of the HY3712B datasheet.

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Full PDF Text Transcription

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HY3712P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 125 ±25 175 -55 to 175 170 IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 585** 170 124 339 170 0.44 62.5 EAS Avalanche Energy, Single Pulsed L=0.
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