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HY4008NA2B - N-Channel Enhancement Mode MOSFET

Download the HY4008NA2B datasheet PDF. This datasheet also covers the HY4008NA2P variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

TO-220FB-3L TO-263-2L N-Channel MOSFET Ordering and Marking Information P HY4008 XYMXXXXXX B HY4008 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation fini

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Note: The manufacturer provides a single datasheet file (HY4008NA2P-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY4008NA2B
Manufacturer HOOYI
File Size 579.16 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY4008NA2B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HY4008NA2P/B N-Channel Enhancement Mode MOSFET Feature  80V/200A RDS(ON)=3.5 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green DevicesAvailable (RoHS Compliant) Applications  Switching application  Power management for inverter systems  Motor control Pin Description TO-220FB-3L TO-263-2L N-Channel MOSFET Ordering and Marking Information P HY4008 XYMXXXXXX B HY4008 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.