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HYG016N04LS1P Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HOOYI

Overview: HYG016N04LS1P/B N-Channel Enhancement Mode MOSFET Feature  40V/240A RDS(ON)= 1.4 mΩ (typ.) @VGS = 10V RDS(ON)= 1.8 mΩ (typ.) @VGS = 4.

Datasheet Details

Part number HYG016N04LS1P
Manufacturer HOOYI
File Size 1.31 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet HYG016N04LS1P-HOOYI.pdf

General Description

TO-220FB-3L TO-263-2L Ordering and Marking Information N-Channel MOSFET P G016N04 XYMXXXXXX B G016N04 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

HYG016N04LS1P Distributor