| Part number | HYG017N04LS1C2 |
|---|---|
| Datasheet | HYG017N04LS1C2-HOOYI.pdf |
| File Size | 626.86 KB |
| Manufacturer | HOOYI |
| Description | N-Channel Enhancement Mode MOSFET |
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PDFN5 6-8L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully pliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
| Part Number | Description |
|---|---|
| HYG017N10NS1TA | N-Channel Enhancement Mode MOSFET |
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| HYG012N03LR1P | N-Channel Enhancement Mode MOSFET |
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| HYG015N10NS1TA | N-Channel Enhancement Mode MOSFET |
| HYG016N04LS1B | N-Channel Enhancement Mode MOSFET |
| HYG016N04LS1P | N-Channel Enhancement Mode MOSFET |
| HYG023N04LS1B | N-Channel Enhancement Mode MOSFET |
| HYG023N04LS1P | N-Channel Enhancement Mode MOSFET |
| HYG023N04NR1D | N-Channel Enhancement Mode MOSFET |
