HYG017N04LS1C2 - N-Channel Enhancement Mode MOSFET

HOOYI

General Description

40V/135A RDS(ON)= 1.7mΩ (typ.) @VGS = 10V RDS(ON)= 2.3mΩ (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available Pin Description DDDD DDDD SSSG GSSS Pin1 PDFN5 6-8L Applications Switching Application Power Management

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HYG017N04LS1C2 n-channel enhancement mode mosfet by HOOYI - Datasheet Preview

Datasheet Details

Part number	HYG017N04LS1C2
Manufacturer	HOOYI
File Size	626.86 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	HYG017N04LS1C2 Datasheet

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Full PDF Text Transcription (Reference)

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HYG017N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description  40V/135A RDS(ON)= 1.7mΩ (typ.) @VGS = 10V RDS(ON)= 2.3mΩ (typ.) @VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available Pin Description DDDD DDDD SSSG GSSS Pin1 PDFN5*6-8L Applications  Switching Application  Power Management for DC/DC  Battery Protection Single N-Channel MOSFET Ordering and Marking Information C2 G017N04 XYMXXXXXX Package Code C2: PDFN5*6-8L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.