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HYG035N02KA1C2 Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HOOYI

Overview: HYG035N02KA1C2 Single N-Channel Enhancement Mode MOSFET Feature.

Datasheet Details

Part number HYG035N02KA1C2
Manufacturer HOOYI
File Size 820.15 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet HYG035N02KA1C2-HOOYI.pdf

General Description

 20V/95A RDS(ON)= 2.6 mΩ (typ.) @VGS = 4.5V RDS(ON)= 3.1 mΩ (typ.) @VGS = 2.5V RDS(ON)= 4.4 mΩ (typ.) @VGS = 1.8V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available Pin Description DDDD DDDD SSSG GSSS Pin1 PDFN8L(5x6) Applications  Switching Application  Power Management for DC/DC  Battery Protection Single N-Channel MOSFET Ordering and Marking Information C2 G035N02 XYMXXXXXX Package Code C2: PDFN8L(5x6) Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi- Nation finish;which are fully pliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free require- ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HUAYI defines “Green” to mean lead-free (RoHS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

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