• Part: HYG035N02KA1C2
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HOOYI
  • Size: 820.15 KB
Download HYG035N02KA1C2 Datasheet PDF
HOOYI
HYG035N02KA1C2
Feature Description - 20V/95A RDS(ON)= 2.6 mΩ (typ.) @VGS = 4.5V RDS(ON)= 3.1 mΩ (typ.) @VGS = 2.5V RDS(ON)= 4.4 mΩ (typ.) @VGS = 1.8V - 100% Avalanche Tested - Reliable and Rugged - Halogen- Free Devices Available Pin Description DDDD DDDD SSSG GSSS Pin1 PDFN8L(5x6) Applications - Switching Application - Power Management for DC/DC - Battery Protection Single N-Channel MOSFET Ordering and Marking Information C2 G035N02 XYMXXXXXX Package Code C2: PDFN8L(5x6) Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi- Nation finish;which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free require- ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by...