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HYG035N02KA1C2 - N-Channel Enhancement Mode MOSFET

General Description

20V/95A RDS(ON)= 2.6 mΩ (typ.) @VGS = 4.5V RDS(ON)= 3.1 mΩ (typ.) @VGS = 2.5V RDS(ON)= 4.4 mΩ (typ.) @VGS = 1.8V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available Pin Description DDDD DDDD SSSG GSSS Pin1 PDFN8L(5x6) Applications Switching

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Datasheet Details

Part number HYG035N02KA1C2
Manufacturer HOOYI
File Size 820.15 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG035N02KA1C2 Datasheet

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HYG035N02KA1C2 Single N-Channel Enhancement Mode MOSFET Feature Description  20V/95A RDS(ON)= 2.6 mΩ (typ.) @VGS = 4.5V RDS(ON)= 3.1 mΩ (typ.) @VGS = 2.5V RDS(ON)= 4.4 mΩ (typ.) @VGS = 1.8V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available Pin Description DDDD DDDD SSSG GSSS Pin1 PDFN8L(5x6) Applications  Switching Application  Power Management for DC/DC  Battery Protection Single N-Channel MOSFET Ordering and Marking Information C2 G035N02 XYMXXXXXX Package Code C2: PDFN8L(5x6) Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi- Nation finish;which are fully compliant with RoHS.