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HYG035N08NS2P - N-Channel Enhancement Mode MOSFET

General Description

TO-220FB-3L TO-263-2L N-Channel MOSFET Ordering and Marking Information P G035N08 XYMXXXXXX B G035N08 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation fi

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Datasheet Details

Part number HYG035N08NS2P
Manufacturer HOOYI
File Size 448.27 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG035N08NS2P Datasheet

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Full PDF Text Transcription (Reference)

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HYG035N08NS2P/B N-Channel Enhancement Mode MOSFET Feature  80V/135A RDS(ON)=3.5 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green DevicesAvailable (RoHS Compliant) Applications  Switching application  Power management for inverter systems  Motor control Pin Description TO-220FB-3L TO-263-2L N-Channel MOSFET Ordering and Marking Information P G035N08 XYMXXXXXX B G035N08 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.