Datasheet4U Logo Datasheet4U.com

HYG038N03LR1C2 Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HOOYI

Overview: HYG038N03LR1C2 Single N-Channel Enhancement Mode MOSFET Feature  30V/84A RDS(ON)= 3.3 mΩ(typ.) @VGS = 10V RDS(ON)= 5.1 mΩ(typ.) @VGS = 4.

Datasheet Details

Part number HYG038N03LR1C2
Manufacturer HOOYI
File Size 1.44 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet HYG038N03LR1C2-HOOYI.pdf

General Description

DDDD DDDD SSSG GSSS PDFN8L(5x6) Applications  Load Switch  Lithium battery protect board Ordering and Marking Information Single N-Channel MOSFET C2 G038N03 XYMXXXXXX Package Code C2: PDFN8L(5x6) Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully pliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HUAYI defines “Green” to mean lead-free (RoHS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

HYG038N03LR1C2 Distributor